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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >A low-cost approach to fabricate SiC nanosheets by reactive sintering from Si powders and graphite
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A low-cost approach to fabricate SiC nanosheets by reactive sintering from Si powders and graphite

机译:用Si粉末和石墨反应烧结制造SiC纳米片的低成本方法

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Silicon carbide (SiC) nanosheet with 2D micro-morphology was fabricated by reactive sintering method and a two-step sintering process. The effect of molar ratio of C and Si (from 1/1 to 4/1) on the phase composition and microstructure was investigated. The obtained results indicated that the SiC whiskers with an average diameter about 73.6 nm generated on the graphite substrate when the molar ratio of Si/C was 1 in the initial batch mixture. As a result of the molar ratio of Si/C at 3/1-4/1, the morphology of SiC generated in graphite surface changed from original whiskers to nanosheets structure. SiC nanosheets were obtained with the average thickness of 33.7 nm (standard deviation: 6.1) in the case of the sample containing Si/C molar ratios of 4/1. The TEM results proved that SiC nanosheets grown along [111] direction. The formation mechanism of SiC nanosheets has been explained in detail based on a liquid Si/graphite substrate model. (C) 2019 Elsevier B.V. All rights reserved.
机译:通过反应性烧结方法和两步烧结工艺制造具有2D微观形态的碳化硅(SiC)纳米片。 研究了C和Si(1/1至4/1)对相组合物和微观结构的摩尔比的影响。 所得结果表明,当初始批料混合物中的摩尔比为1时,在石墨衬底上产生平均直径约73.6nm的SiC晶须。 由于3 / 1-4 / 1的Si / C的摩尔比,石墨表面中产生的SiC的形态从原始晶须改变为纳米晶须结构。 在含有4/1的Si / C摩尔比的样品的情况下,使用33.7nm(标准偏差:6.1)的平均厚度获得SiC纳秒。 TEM结果证明了SiC纳米片沿[111]方向生长。 已经基于液体Si /石墨衬底模型详细说明了SiC纳米片的形成机制。 (c)2019 Elsevier B.v.保留所有权利。

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