Effect of Sn doping on thermoelectric properties of p-type manganese telluride

摘要

Here, the intellectual challenges for thermoelectric materials revolves around the strategy of point defect engineering to regulate the electrical and thermal transport nature of Mn1.06-xSnxTe (x = 0, 0.03, 0.035, 0.04, 0.045) materials. The power factor increases with substitution of Sn into the lattice of Mn1.06Te leading to enhance the carrier concentrations due to reduction of the band gap. Meanwhile, the thermal conductivity has also been remarkably reduced due to diverse phonon scattering and mass fluctuation by Sn substitution. As a result, a maximum ZT-0.93 for Mn1.06-xSnxTe(x = 0.04) sample has been achieved at 873 K, which increases by 56% in comparison with the un-doped sample. (C) 2018 Elsevier B.V. All rights reserved.