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SYNTHESIS OF ANTIMONY TELLURIDE (SB-TE) PASTE AND P-TYPE THERMOELECTRIC MATERIAL FORMING METHOD USING PASTE
SYNTHESIS OF ANTIMONY TELLURIDE (SB-TE) PASTE AND P-TYPE THERMOELECTRIC MATERIAL FORMING METHOD USING PASTE
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机译:锑化碲化物(SB-TE)糊料的合成及利用糊料形成P型热电材料的方法
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PURPOSE: The synthesis of antimony telluride (Sb-Te) paste and a method for forming a p-type thermoelectric material using paste are provided to manufacture a thermoelectric element by a thermal process and the synthesis of paste, thereby obtaining high power. CONSTITUTION: Antimony telluride paste is synthesized (S10). The antimony telluride paste is printed on a substrate (S20). The printed substrate is dried to evaporate solvent (S30). Binders are evaporated from the dried substrate. To synthesize an antimony telluride compound, a thermal process is performed at higher temperature compared to the temperature of the drying process (S40). [Reference numerals] (AA) Sb-Te Powder(75wt%) + solvent (22.4wt%) + Binder (0.2wt%) + Glass Powder (2.4wt%); (BB) Dry for 10 to 20 minutes in an oven at 100-200C; (CC) Input a specimen along with tellurium powder; (DD) First stage; (EE) Heat for 10 minutes at 260C in a vacuum atmosphere; (FF) Second stage; (GG) Heat for 10 minutes at 260C in a N_2 atmosphere; (HH) Third stage; (II) Heat for more than 20 minutes at 430C in a N_2 atmosphere; (JJ) Fourth stage; (KK) Heat for more than 10 minutes at 500C in a N_2 atmosphere; (S10) Paste synthesis stage; (S20) Screen print stage; (S30) Drying stage; (S40) Heat treatment stage
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