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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Influence of Bi3Zn2Sb3O14 pre-synthesis phase on electrical properties of the ZnO-Bi2O3 based varistor ceramics
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Influence of Bi3Zn2Sb3O14 pre-synthesis phase on electrical properties of the ZnO-Bi2O3 based varistor ceramics

机译:BI3ZN2SB3O14预合成相对ZnO-Bi2O3基压敏电阻陶瓷电性能的影响

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摘要

The effects of the pre-synthesis phase Bi3Zn2Sb3O14 on microstructure and non-linear characteristic of ZnO varistor ceramics are investigated. The results are discussed and compared with previous studies of ZnO varistors with Sb2O3 additions. It is shown that adding Bi3Zn2Sb3O14 to ZnO varistor ceramics can effectively inhibit the growth of ZnO grains, which results in a smaller grain size and a significantly higher breakdown voltage comparing with Sb2O3 samples. On the other hand, Bi3Zn2Sb3O14 has a significant influence on the defect structure and component distribution of grain-boundary regions. When Bi3Zn2Sb3O14 content increases from 0 to 3 wt%, the value of the interface state density (N-s) increases sharply. At the same time, the electrical properties are improved gradually and reached an optimized value with the nonlinear coefficient (alpha) up to 43 corresponding to the high barrier height (phi(b)) of 2.04 eV. (c) 2020 Elsevier B.V. All rights reserved.
机译:研究了预合成相Bi3Zn2SB3O14对ZnO变阻器陶瓷的微观结构和非线性特性的影响。 讨论了结果,并与先前的ZnO变阻器进行了与SB2O3添加的研究进行了比较。 结果表明,向ZnO变阻器陶瓷添加Bi3zN2SB3O14可以有效地抑制ZnO晶粒的生长,这导致粒度较小,与与SB2O3样品相比的明显更高的击穿电压。 另一方面,BI3ZN2SB3O14对晶体边界区域的缺陷结构和组成分布具有显着影响。 当Bi3Zn2SB3O14内容从0增加到3wt%时,接口状态密度(N-S)的值急剧增加。 同时,电性能逐渐改进,并达到了对应于2.04eV的高阻挡高度(PHI(B))的非线性系数(α)的优化值。 (c)2020 Elsevier B.v.保留所有权利。

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