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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Synthesis and room-temperature H2S sensing of Pt nanoparticle-functionalized SnO2 mesoporous nanoflowers
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Synthesis and room-temperature H2S sensing of Pt nanoparticle-functionalized SnO2 mesoporous nanoflowers

机译:PT纳米粒子官能化SnO2中孔纳米割草机的合成和室温H2S检测

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摘要

Platinum nanoparticle (NP)-functionalized flower-like mesoporous SnO2 with a high specific surface area (31.6 m(2)g(-1)) and large pore diameter (32.5 nm) was synthesized using a double-template technique. The presence of Pt NPs was confirmed by X-ray photoelectron spectroscopy. Pt NPs with a size distribution of 2-4 nm were anchored on mesopores of the pre-synthesized three-dimensional SnO2 nanoflowers upon physical mixing. The resulting Pt NP-decorated three-dimensional SnO2 mesoporous nanoflowers were incorporated into a gas sensor to detect H2S. The Pt-SnO2 sensor exhibited enhanced gas sensing properties toward H2S, with a 100 ppb detection limit, fast response, low working temperature, excellent stability, and good selectivity. The 0.3 wt% Pt-SnO2 sensor exhibited a high response and excellent selectivity to H2S at room temperature (response value to 5 ppm H2S at 30 degrees C was 160). The significant improvements in gas sensing properties were attributed to the synergistic effect of the mesoporous nanostructure induced by the double-template method and the catalytic sensitization of the Pt NPs. These findings offer guidance for designing mesoporous materials and low-temperature H2S sensors. (C) 2020 Elsevier B.V. All rights reserved.
机译:使用双模板技术合成铂纳米粒子(NP) - 具有高比表面积(31.6m(2 )g(-1))和大的孔径(32.5nm)的官能化花样的介孔SnO 2。通过X射线光电子能谱证实了Pt NP的存在。在物理混合时,具有2-4nm的尺寸分布的Pt NPS在预合成的三维SnO2纳米圈的中孔上锚定。将得到的PT NP装饰的三维SnO2中孔纳米辊掺入气体传感器中以检测H2S。 PT-SNO2传感器对H2S的增强的气体传感性能表现出增强的气体传感性能,100ppb检测限,快速响应,工作温度低,稳定性优异,选择性良好。 0.3wt%Pt-SnO2传感器在室温下表现出高响应和优异的H2S选择性(在30摄氏度下为5ppm H 2 S为160)。气体传感性质的显着改善归因于由双模板法引起的介孔纳米结构的协同效应和Pt NP的催化敏化。这些发现提供了设计中孔材料和低温H2S传感器的指导。 (c)2020 Elsevier B.v.保留所有权利。

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