Photoelectrochemical, Raman spectroscopy, XRD and photoluminescence study of disorder in electrochemically deposited kesterite thin film

摘要

Photo-electrochemical measurements, Raman spectroscopy, XRD with Cu K(alpha 1 )radiation and photo-luminescence (PL) spectroscopy studies were used for evaluating of photo-electric activity of the kesterite thin films and its relation with Cu and Zn atoms disorder. The kesterite films were synthesized using the electrochemical deposition of Cu-Sn and Zn layers on Mo/soda-lime glass substrates and subsequent sulfurization. The photo-electrochemical current density was measured as a function of the potential under chopped illumination in 0.1 M Eu(NO3)(3) aqueous solution. All the methods showed the medium level of order, i.e. neither completely disordered nor highly ordered. However, the results of Raman spectroscopy predicted the stoichiometry of kesterite different from the one revealed by XRD. The XRD data showed the presence of defects [2Cu((Z) over barn) + Sn-Zn(2+)], while Raman spectroscopy predicted [2Zn(Cu)(+) + Zn-Sn(2-)] defects. Based on the results obtained it has been concluded that XRD revealed more plausible information on the kesterite stoichiometry and the point defects as compared to Raman spectroscopy under current experimental conditions. (C) 2020 Published by Elsevier B.V.