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Thickness-modulated thermochromism of vanadium dioxide thin films grown by magnetron sputtering

机译:磁控溅射生长的二氧化钒薄膜的厚度调制热切割

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Vanadium dioxide (VO2) films were prepared on soda-lime glass by direct current magnetron sputtering at 320 degrees C. Effects of film thickness on the microstructure, surface morphology and thermochromic performance of VO2 films were investigated. X-ray diffraction showed that the deposited films have strong preferred orientation of VO2 (011) lattice when the film thickness higher than 102 nm. The calculated grain sizes of VO2 films increased from 16.05 nm to 34.56 nm continuously with the increasing of film thickness. UV/VIS/NIR spectrophotometer showed that the visible transmittance deceased while the infrared transmittance switching efficiency increased as the film thickness increased from 79 nm to 264 nm. Additionally, the optical band gaps of VO2 films were in a range of 1.15 eV-1.40 eV, and the thicker film exhibited the smaller value. Moreover, the results of measured temperature-dependent electrical resistivity of these VO2 films showed that the phase-transition temperature is in a range of 53-60 degrees C, which is much lower than that of single-crystal VO2 (68 degrees C). With the film thickness increasing, the metal semiconductor phase transition becomes more obvious. Overall, films with thickness in the range of 80-100 nm showed comparatively relatively balanced combination of visible transmittance and solar switching efficiency.
机译:通过直接电流磁控溅射在320℃下通过直接电流磁控溅射制备二氧化钒(VO2)膜。研究了膜厚度对微观结构的影响,研究了VO2膜的表面形态和热致变色性能。 X射线衍射表明,当膜厚度高于102nm时,沉积的膜具有VO2(011)晶格的强优选取向。计算出的晶粒尺寸的vo2薄膜从膜厚度的增加连续地从16.05nm至34.56nm增加。 UV / VI / NIR分光光度计显示,随着膜厚度增加到264nm的红外透射率切换效率增加的同时,可见光透射率降低。另外,VO2膜的光带间隙在1.15eV-1.40eV的范围内,较厚的膜表现出较小的值。此外,这些VO2膜的测量温度依赖性电阻率的结果表明,相转变温度在53-60℃的范围内,其远低于单晶VO2(68℃)的范围。随着膜厚度的增加,金属半导体相变变得更加明显。总的来说,80-100nm范围内的厚度的薄膜显示了可见光透射率和太阳能切换效率的相对较差的相对平衡。

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