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机译:多孔IngaN层In0.42ga0.58N / GaN双异质结构中结晶质量和发光的降解机理
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Phys Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
Dalian Univ Technol Sch Microelect Dalian 116024 Peoples R China;
机译:多孔IngaN层In0.42ga0.58N / GaN双异质结构中结晶质量和发光的降解机理
机译:形成量子尺寸AlGaN / GaN / Ingan / GaN异质结构层的机制
机译:基于AlGaN / AlN / InGaN / GaN的双异质结构中的电荷密度建模,包括InGaN层应变松弛
机译:InGaN层和GaN / InGaN / GaN双异质结构的光学表征
机译:GaN / AlGaN异质结构的热稳定性和降解分析
机译:GaN / InGaN异质结构中的增强发光措施
机译:具有不同InGaN背势垒层和通过MOCVD生长的GaN沟道厚度的Al 0.25Ga 0.75N / AlN / GaN异质结构中的电子传输性能
机译:利用氮化铟镓(InGaN)/氮化镓(GaN)异质结构的负极化特性实现具有深紫外(<250nm)发射的频率倍增蓝绿激光(2年级)。