Direct Growth of Graphene on Fused Quartz by Atmospheric Pressure Chemical Vapor Deposition with Acetylene

摘要

Direct growth of graphene on target substrates is significant for many optoelectronic applications. A direct growth method of graphene on fused quartz by atmospheric pressure chemical vapor deposition with acetylene as carbon source has been proposed. The functions of growth parameters have been studied by Raman spectroscopy, scanning electron microscope and transmission electron microscope. Large area high-quality bilayer AB-stacked graphene films can be fabricated continuously on the whole fused quartz surface with optimal parameters. Governed by a surface-assisted catalyzed growth mode, the short of growth time is not enough to cover the surface completely, while longer duration will induce excrescent layers. Meanwhile, the hydrogen kinetics shows a competition between the catalytic effect and etching effect of hydrogen. The former is dominant with the ratio of hydrogen and argon flow rate below 0.33, while the later take over with more hydrogen concentration. To corroborate the application, a centimeter level graphene optical modulator is assembled with the as-grown samples and proved to work well with a maximum modulation depth of 3.4% at 1000 nm wavelength. This work paves a convenient way for graphene growth directly on fused quartz with acetylene for great potential applications in photoelectric fields.