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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Resonant Raman Scattering in Undoped and Lanthanide-Doped CeO2
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Resonant Raman Scattering in Undoped and Lanthanide-Doped CeO2

机译:在未掺杂和镧系元素的CEO2中共振拉曼散射

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CeO2 has a narrow, empty band of Ce 4f states that lies between an O 2p-based valence band and a Ce 5d-based conduction band. The O 2p-Ce 4f optical band gap is positioned at similar to 3.2 eV with an absorption band centered at similar to 3.8 eV. We investigated the Raman scattering of bulk CeO2 in the excitation energy range of 1.96-3.81 eV. The resonant enhancement profile of the longitudinal optical (LO) phonon at similar to 590 cm(-1) closely follows that of the 2LO band and both profiles track the optical absorption of the O 2p-Ce 4f electronic transition. Multi-LO phonon bands were found to appear up to the sixth order, pointing to an electron-phonon Frohlich interaction as the source of the resonant enhancement. The similar to 600 cm(-1) off-resonant D-2 band (denoted as MO8-type complex in ceria doped with M aliovalent ions) is overshadowed under resonant conditions by the resonant LO phonon scattering. Hence, spectral analysis of defect bands under resonant conditions has to be distinct from that applied under off-resonant conditions and care must be taken when dealt with under a single framework. We investigated the resonant Raman spectra of Lu-, La-, Gd-, or Sm-doped ceria ceramic pellets as a function of increasing Do(3+) mol %, in the fluorite phase range (up to 20 mol %). For La and Lu, the general trend of the Do(3+) mol % frequency dependence for the D-1 local mode is qualitatively similar to that of the F-2g phonon and it follows the respective expansion (La) or contraction (Lu) in the lattice parameter. However, for Gd and Sm, the trend is opposite to the F-2g mode. This trend may stem from local lattice contraction around point defects, which was suggested, based on local structure probes such as X-ray absorption spectroscopy and pair distribution function analysis of X-ray diffraction. Our analysis provides access to average as well as to local structures of ceria solid solutions, via resonant Raman spectroscopy.
机译:CEO2具有狭窄的空带的CE 4F状态,位于基于O 2P的价频带和基于CE 5D的导通带之间。 O 2P-CE 4F光带间隙定位在类似于3.2eV,其中吸收带以类似于3.8eV为中心。我们调查了散装CEO2的拉曼散射在1.96-3.81 ev的激发能量范围内。与590cm(-1)类似的纵向光学(LO)声子的谐振增强曲线紧密地跟随2LO带和两个轮廓跟踪O 2P-CE 4F电子转换的光学吸收。发现多Lo声子带出现在第六顺序上,指向Electron-Phonon Frohlich相互作用作为谐振增强的源。类似于600cm(-1)脱谐的D-2带(表示为掺杂有M掺杂的二氧化铈中的MO8型复合物),通过共振的LO声子散射在共振条件下被掩盖。因此,在共振条件下的缺陷带的光谱分析必须不同于在偏离共振条件下施加的缺陷条件,并且在单一框架下处理时必须小心。我们研究了Lu,La-,Gd-或SM掺杂的Ceria陶瓷颗粒的共振拉曼光谱,作为氟能量相范围内(3+)摩尔%的函数(高达20mol%)。对于La和Lu,DO(3+)摩尔%对D-1局部模式的频率依赖性的一般趋势与F-2G源的频率依赖性类似于F-2G声子的频率,并且它遵循相应的膨胀(LA)或收缩(Lu )在格子参数中。但是,对于GD和SM,趋势与F-2G模式相反。这种趋势可能源于围绕点缺陷的局部晶格收缩,这是基于局部结构探针,例如X射线吸收光谱和对X射线衍射的对分布函数分析。我们的分析通过谐振拉曼光谱,提供了对平均水平的进入以及局部结构的局部结构。

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