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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Electronic and Magneto-Optical Properties of the Molybdenum-Vacancy Center in Zirconia and Its Qubit Applications
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Electronic and Magneto-Optical Properties of the Molybdenum-Vacancy Center in Zirconia and Its Qubit Applications

机译:氧化锆钼空缺中心的电子和磁光性能及其Qubit应用

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The neutral molybdenum-vacancy (VOMoZr) center in cubic zirconia was selected to expand the taxonomy of available defective systems acting as a qubit. To theoretically prove the feasibility of its qubit applications, investigation of the electronic and magneto-optical properties of the neutral V(O)Mo(Zr )center was carried out via first-principles calculations. The center possesses a trigonal symmetry (C-3v) with a spin-triplet ground state (GS). The molecular orbital combinations were qualitatively analyzed by using the group theory. For guiding the qubit-specific manipulation, its GS zero-field splitting was investigated and measured to be 2208.29 MHz, its zero-phonon line was located at 1.03 eV, and the Stoke and anti-Stoke shifts were at 201.8 and 136.5 meV, respectively. This study shows that the neutral VOMoZr center is competent for a qubit and paves the way toward the further implementation of qubit applications based on the neutral V(O)Mo(Zr )center.
机译:选择立方氧化锆中的中性钼空位(Vomozr)中心,扩大可用缺陷系统的分类,作为Qubit。 为了理论上证明其量子位应用的可行性,通过第一原理计算进行中性V(o)Mo(Zr)中心的电子和磁光性能的研究。 该中心具有三角形对称(C-3V),具有旋转三重态地(GS)。 通过使用组理论,定性分析了分子轨道组合。 为了引导特定的QUBit特定操作,将GS零场分裂进行研究并测量为2208.29 MHz,其零位线位于1.03eV,叉池分别为201.8和136.5 mev。 。 本研究表明,中性Vomozr中心能够对Qubit称职,并根据中性V(o)Mo(Zr)中心进一步实现Qubit应用的进一步实现。

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