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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >First-Principles Study on the Structure, Electronic, and Optical Properties of Cs2AgBiBr6-xClx Mixed-Halide Double Perovskites
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First-Principles Study on the Structure, Electronic, and Optical Properties of Cs2AgBiBr6-xClx Mixed-Halide Double Perovskites

机译:CS2AGBIBR6-XCLX混合卤化物双钙钛矿结构,电子和光学性能的第一原理研究

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Double halide perovskites Cs2AgBiX6 (X = Cl, Br) have been proposed as promising nontoxic materials with enhanced chemical stability for the optoelectronic application. Controllably tuning the band gap by mixing the halide components is a valuable approach for its application and has not yet been explored. Here, we report density functional theory calculations, through which we investigate the crystal structure, electronic, and optical properties of mixed-halide Cs2AgBiBr6-xClx (x = 0, 1, 2, 3, 4, 5, and 6) compounds. Our results show that the crystal structure changes with the x value, and some structural phases with x = 2, 3, and 4 have the same energy indicating very similar structural stability. Band structure calculations show that Cs2AgBiBr6-xClx compounds have similar electronic properties. That is, they all have indirect band gaps with the valence band maximum at the X point and the conduction band minimum at the L point in the Brillouin zone. The band gap increases almost linearly as a function of incorporated, but the slope is different depending on which methods are used in the calculations. Based on the electronic structure, the optical absorptions of Cs2AgBiBr6-xClx are calculated using both the regular semilocal and hybrid functionals. Our results show that the band gap of Cs2AgBiBr6 can be tuned controllably by Cl-doping, which is valuable for its potential photoelectronic application.
机译:已经提出了双卤化物钙质CS2AGBIX6(X = CL,BR)作为具有增强的光电应用的化学稳定性的无毒材料。通过混合卤化物组分可控制地调谐带隙是其应用的有价值的方法,尚未探索。在此,我们报告密度泛函理论计算,通过该计算,我们研究了混合卤化物CS2AGBIBR6-XCLX(X = 0,1,2,3,4,5和6)化合物的晶体结构,电子和光学性质。我们的结果表明,晶体结构随X值而变化,x = 2,3和4的一些结构相具有表明非常相似的结构稳定性的能量。带结构计算表明,CS2AGBIBR6-XCLX化合物具有相似的电子性能。也就是说,它们都具有间接带间隙,该X点处的价带最大值和布里渊区的L点处的导通带最小。带隙几乎线性地随附的函数增加,但斜率取决于计算中使用的方法。基于电子结构,使用常规半核和混合功能来计算CS2AGBIB16-XCLX的光吸收。我们的结果表明,CS2AGBIBR6的带隙可以通过CL-掺杂可控地调节,这对于其潜在的光电应用是有价值的。

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