Electronic structure of VxTi1-xSe2 in wide concentration region (0.06 <= x <= 0.9)

摘要

An experimental study of the electronic structure of VxTi1-xSe2 system in a wide range of vanadium concentrations (x = 0.06-0.9) using x-ray photoelectron spectroscopy and resonant photoelectron spectroscopy has been performed. The partial charge transfer from the VSe2 to TiSe2 structural fragments is experimentally observed, and the most part of the charge is localized on the vanadium atoms in the VSe2 structural fragments. Published by AIP Publishing.