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首页> 外文期刊>Japanese journal of applied physics >Influence of Lithium and Potassium Doping on Structure and Electrical Characteristics of Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_(0.04)O_3 Lead-Free Piezoelectric Ceramics
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Influence of Lithium and Potassium Doping on Structure and Electrical Characteristics of Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_(0.04)O_3 Lead-Free Piezoelectric Ceramics

机译:锂和钾掺杂对Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_(0.04)O_3无铅压电陶瓷的结构和电性能的影响

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摘要

The influence of lithium and potassium doping on the structural and electrical characteristics of Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_(0.04)O_3 lead-free piezoelectric ceramic prepared by the conventional solid-state reaction method was investigated and discussed. X-ray diffraction (XRD) and the scanning electron microscopy (SEM) were carried out to analyze the phases and microstructures of the ceramic specimens, respectively. An impedance analyzer (HP4294A) was used to measure the relative dielectric constant and loss tangent. The electromechanical coupling factor (k_P) and the relative dielectric constant (ε_r) of Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_(0.04)O_3 piezoelectric ceramic for x = 0.06 and y = 0.485 were 1280 and 42.8%, respectively. Finally, the Curie temperature (Tc) of the piezoelectric ceramic was about 340 ℃ and the orthogonal-to-tetragonal phase transition temperature (T_(o-t)) was about 110℃.
机译:锂和钾掺杂对制备的Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_(0.04)O_3无铅压电陶瓷的结构和电特性的影响研究和讨论了传统的固态反应方法,分别用X射线衍射(XRD)和扫描电子显微镜(SEM)分析了陶瓷样品的相和显微结构,并使用了阻抗分析仪(HP4294A) Li_x(K_yNa_(1-y)_(1-x)(Nb_(0.9)Ta_(0.06)Sb_)的机电耦合系数(k_P)和相对介电常数(ε_r) x = 0.06和y = 0.485的(0.04)O_3压电陶瓷分别为1280和42.8%,最后,压电陶瓷的居里温度(Tc)约为340℃,正交相变温度(T_ (ot))约为110℃。

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  • 来源
    《Japanese journal of applied physics》 |2012年第3issue1期|p.035801.1-035801.4|共4页
  • 作者单位

    Department of Electronics Engineering and Computer Science, Tung-Fang Design University, Kaohsiung 829, Taiwan, R.O.C.;

    Department of Electronic Engineering, Southern Taiwan University, Tainan 700, Taiwan, R.O.C.;

    Department of Electronics Engineering and Computer Science, Tung-Fang Design University, Kaohsiung 829, Taiwan, R.O.C.;

    Department of Mathematics and Physics, Chinese Air Force Academy, Kangshan, Kaohsiung 804, Taiwan, R.O.C.;

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