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Dependence of stability and electronic and optical properties of perovskite quantum dots on capping ligand chain length

机译:钙钛矿量子点对覆盖配体链长度的稳定性和电子和光学性质的依赖性

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Methylammonium lead bromide (MAPbBr(3)) perovskite quantum dots (PQDs) passivated with capping ligands with different chain length, including butylamine-valeric acid (BUTY-VA), octylamine-caprylic acid (OCTY-CA), and dodecylamine-lauric acid (DODE-LA), are investigated to determine an optimized capping layer thickness for maximizing both electronic and antimoisture properties of perovskite materials in optoelectronic devices. The photoluminescence quantum yield (PLQY) is observed to be chain length dependent, where the PLQY of BUTY-VA, OCTY-CA, and DODE-LA MAPbBr(3) PQDs is 82% +/- 4%, 68% +/- 7%, and 18% +/- 2%, respectively. Electrochemical impedance spectroscopy (EIS) measurements of each PQD film reveal that there is a slight increase in conductivity from reducing the capping ligand chain length from 8 carbon atoms (OCTY-CA) to 4 carbon atoms (BUTY-VA). Using the Butler-Volmer equation, the charge transfer factor beta for BUTY-VA and OCTY-CA MAPbBr(3) PQD films in a tetrabutylammonium hexafluorophosphate-dichloromethane electrolyte solution was calculated to be 0.36 and 0.31, respectively. From an Arrhenius analysis, the activation energy (E-a) for charge transport between the PQD film and the electrolyte was calculated to be 77 and 90 meV for BUTY-VA and OCTY-CA MAPbBr(3) PQD films, respectively. Moreover, passivating PQDs with capping ligands with 12 carbon atoms (DODE-LA) almost completely insulates the PQDs and diminishes charge transport. This is also observed in transient photocurrent density measurements. The results suggest that the inter-PQD distance in this solid film is too long for effective tunneling to occur. However, using BUTY-VA capping ligands to improve electronic properties of PQD solid film comes with a cost of stability.
机译:甲基丙铵溴化溴化溴化溴化溴(MapbBr(3))钙钛矿量子点(PQD)钝化具有不同链长的封端配体,包括丁胺 - 戊酸(Buty-Va),辛酰胺 - 辛酸(八十型-CA)和十二烷基胺 - 月桂酸(DODE-LA)进行研究以确定优化的封端层厚度,用于最大化钙钛矿材料的光电器件中的电子和抗体性能。观察到光致发光量子产率(PLQY)是链长依赖性的,其中丁Y-Va,octy-ca和dode-la mapbbr(3)PQD的Plqy为82%+/- 4%,68%+/- 7%和18%+/- 2%。每个PQD膜的电化学阻抗光谱(EIS)测量显示,从8个碳原子(octy-ca)至4个碳原子(Buty-Va)中,导电率降低了导电性略有增加。使用Butler-Volmer方程,四丁基六氟磷酸二氯甲烷电解质溶液中的Buty-Va和八十型Ca Mapbbr(3)PQD膜的电荷转移因子β分别计算为0.36和0.31。从Arrhenius分析,PQD膜与电解质之间的电荷传输的激活能量(E-A)分别计算为Buty-VA和八核-CA MAPBBR(3)PQD膜的77和90mEV。此外,用具有12个碳原子(Dode-La)的覆盖配体钝化PQD几乎完全绝缘PQD并减小电荷输送。在瞬态光电流密度测量中也观察到这一点。结果表明,该实心薄膜中的PQD间距离太长,以便有效隧道发生。然而,使用Buty-Va覆盖配体来改善PQD实心膜的电子性质,具有稳定性的成本。

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