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Control of resonance fluorescence of a four-level quantum emitter near a plasmonic nanostructure

机译:等级纳米结构附近四级量子发射极的共振荧光控制

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We present a theoretical study of the resonance fluorescence of a four-level double-V-type quantum emitter near a plasmonic nanostructure. The quantum system interacts with two orthogonal circularly polarized laser fields with the same frequency and intensity, but with different phases. For the plasmonic nanostructure we consider a two-dimensional array of metal-coated dielectric nanospheres. We show that the presence of the plasmonic nanostructure leads to strong modification of both the resonance fluorescence spectrum and the transition from antibunching to bunching for the fluorescent photons. In addition, we show that both the resonance fluorescence spectrum and the second-order correlation function are strongly phase-dependent so that the relative phase of laser fields can be used for the efficient control of the resonance fluorescence characteristics. The results are explained by using a dressed-state picture.
机译:我们在等级纳米结构附近的四级双V型量子发射器的共振荧光的理论研究。 量子系统与具有相同频率和强度的两个正交的圆偏振激光场相互作用,但阶段不同。 对于等离子体纳米结构,我们考虑了一种二维金属涂覆的介电纳米球。 我们表明,等离子体纳米结构的存在导致对共振荧光光谱的强烈改变和从抗卷绕以掺入荧光光子的转变。 另外,我们表明共振荧光光谱和二阶相关函数都依赖性强相依赖,使得激光场的相对相可以用于有效控制共振荧光特性。 结果是通过使用衣服状态的图像来解释的。

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