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首页> 外文期刊>Physics Letters, A >The laser field controlling on the nonlinear optical specifications of the electric field-triggered Rosen-Morse quantum well
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The laser field controlling on the nonlinear optical specifications of the electric field-triggered Rosen-Morse quantum well

机译:控制电场触发的非线性光学规格的激光场阱井

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We consider, for the first time, optical specifications such as the nonlinear optical rectification (NOR), the second harmonic generation (SHG) and the third harmonic generation (THG) of quantum well (QW) that has the Rosen-Morse potential confinement and is generated by GaAs/GaAlAs heterostructure. To do this, QW structure is firstly asymmetrized by applying an external electric field, as 10 kV/cm. Therefore, the electric field-triggered (F = 10 kV/cm) Rosen-Morse QW (eftRMQW) is taken into consideration throughout the study. In this study, it is elucidated that how to control NOR, SHG and THG optical responses through monochromatic linearly polarized intense laser field (ILF). In order to be able to investigate the ILF effects, the time-dependent of ILF is removed to potential energy term of the wave equation by using Kramers-Henneberger (KH) and the dipole approximations, building the laser-dressed potential. Then, the bound state energies and the wave functions of eftRMQW are obtained using the diagonalization method within the effective mass approach and the parabolic approximation. The influences of the ILF and structural parameters of eftRMQW on NOR, SHG and THG coefficients are discussed in detail. The optimum of structure is ferreted out for devices design and applications that will consider eftRMQW, and for this optimum the alternative parameter analysis is carried out. (C) 2020 Elsevier B.V. All rights reserved.
机译:我们考虑第一次光学规范,例如非线性光学整流(NOR),第二谐波生成(SHG)和量子阱(QW)的第三谐波生成(THG),具有罗森摩尔斯潜在限制和由GaAs / Gaalas异质结构产生。为此,通过施加外部电场,QW结构首先应用于10kV / cm。因此,在整个研究中考虑了电场触发(F = 10kV / cm)Rosen-Morse QW(EFTRMQW)。在该研究中,阐明了如何通过单色线性偏振强激光场(ILF)控制NOR,SHG和THG光学响应。为了能够研究ILF效果,通过使用Kramers-Henneberger(KH)和偶极近似,构建激光穿着潜力,将ILF的时间依赖于波动方程的电位能量术语。然后,使用有效质量方法和抛物线近似内的对角化方法获得绑定状态能量和eFtrmQW的波函数。详细讨论了EFTRMQW的ILF和结构参数的影响,也是详细讨论的SHG和THG系数。对于将考虑EFTRMQW的设备设计和应用程序,结构的最佳结构,并且对于该最佳参数进行替代参数分析。 (c)2020 Elsevier B.v.保留所有权利。

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