Effect of Pb doped on thermal stability and electrical transport properties of single crystalline β-Zn 4Sb 3

摘要

AbstractIn this study, we report the effect of Pb doping on both thermal stability and electrical transport properties of the single crystalline β-Zn4Sb3，prepared based on the initial stoichiometric ratios of Zn4-xSb3PbxSn3(x= 0, 0.2, 0.4, 0.6 and 0.8). All samples possess a metallic luster surface and hardly defects and pores. The TG-DSC results show that the Pb doping samples exhibit an excellent thermal stability. Electrical transport properties of the samples were optimized by Pb doping. Among all samples exhibitp-type conduction with carrier concentrations varying from 4.88 × 1019to 14.29 × 1019cm?3, as carrier mobility changes from 31.1 to 66.4cm2V?1s?1at room temperature. With the increase of Pb initial content, Seebeck coefficient increases and electrical conductivity decreases. The sample with Pb initial contentx= 0.6 exhibits an excellent electrical properties, and obtains maximum power factor of 1.69 × 10?3Wm?1K?2at 390K.]]>