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Fabrication, characterization and simulation of Zn-doped PbS nanopowder

机译:Zn掺杂PBS纳米液的制造,表征和仿真

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摘要

The Zn-doped PbS nanopowder (NP) is fabricated by the surface growth in the solution phase and cation substitution method. The structure and morphology of NP are characterized by XRD, TEM and EDX. Electronic structure of Zn-doped PbS is investigated using first-principles calculations based on the density functional theory. It is found that Zn-doping in PbS will reduce the band gap, increase the valence bands degeneracy, and lead to the transition from direct band gap to indirect band gap. The interaction among Zn(4s), S(3p) and Pb(6p) orbitals plays a crucial role in the band modulation of Zn-doped PbS. The interesting band structure change due to the impurity can have a significant effect on the physical properties of PbS based material, such as optical and thermoelectric properties.
机译:通过溶液相和阳离子取代方法的表面生长制造Zn掺杂的PBS纳米粉末(NP)。 NP的结构和形态特征在于XRD,TEM和EDX。 基于密度泛函理论,研究了使用初始原理计算来研究Zn掺杂PBS的电子结构。 发现PBS中的Zn掺杂将减少带隙,增加价带退化,并导致从直接带隙到间接带隙的过渡。 Zn(4S),S(3P)和PB(6P)轨道之间的相互作用在Zn掺杂PBS的带调制中起着至关重要的作用。 由于杂质引起的有趣频带结构可以对基于PBS的材料的物理性质,例如光学和热电性能具有显着影响。

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  • 来源
    《Physica, B. Condensed Matter》 |2018年第2018期|共5页
  • 作者单位

    South China Normal Univ Sch Phys &

    Telecommun Engn Guangdong Prov Engn Res Ctr Optoelect Instrument Guangzhou 510006 Guangdong Peoples R China;

    South China Normal Univ Sch Phys &

    Telecommun Engn Guangdong Prov Engn Res Ctr Optoelect Instrument Guangzhou 510006 Guangdong Peoples R China;

    South China Normal Univ Sch Phys &

    Telecommun Engn Guangdong Prov Engn Res Ctr Optoelect Instrument Guangzhou 510006 Guangdong Peoples R China;

    South China Normal Univ Sch Phys &

    Telecommun Engn Guangdong Prov Engn Res Ctr Optoelect Instrument Guangzhou 510006 Guangdong Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理学;
  • 关键词

    Zn-doped PbS nanopowder; Band structure; Direct-indirect band gap transition; Fabrication;

    机译:Zn掺杂PBS纳米孔;带结构;直接间接带隙过渡;制造;

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