Multilevel resistive switching memory behaviors arising from ion diffusion and photoelectron transfer in alpha-Fe2O3 nano-island arrays

摘要

Resistive switching (RS) memory behaviors are observed in an Ag|alpha-Fe2O3|Ti device after operating under an ultralow bias voltage of +/- 0.1 V. An SET voltage of similar to 20 mV is obtained under illumination. Multilevel RS memory is realized under photoelectric signal control. The separation and fast transfer of hole-electron pairs are responsible for the enhanced RS memory under illumination.