Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of AI/TiO_2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation

摘要

To analyze and explain the gradual reset switching property of the bipolar switching resistive random access memory (RRAM) for multilevel cell (MLC) operation, the effect of the amount of plasma oxidation on the gradual reset switching behavior of the AI/TiO_2-based RRAM cell structure is investigated. The device that undergoes plasma oxidation in a shorter time has a better ON/OFF current (I_(ON)I_(OFF)) ratio and shows increased ON current (I_(ON)). The device that undergoes long plasma oxidation occasionally shows the step reset switching behavior because of the thick conductive filament formation in the ON state. This is clearly explained by the different conduction mechanisms during the ON state.