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High-throughput HSE study on the doping effect in anatase TiO2

机译:高通量HSE研究anatase TiO2中的掺杂效应

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摘要

Titania is a widely used semiconductor due to its excellent optoelectronics and catalytic properties. Doping with other cations or anions by substitution of Ti or O is a common way to adjust the electronic structure of pristine TiO2. Here, using ab initio calculations at the Heyd-Scuseria-Ernzerhof (HSE06) level, the substitution energy, formation energy and electronic structures of anatase TiO2 doped with 40 kinds of elements including transition metals, alkali metals, alkaline earth metals, p-block metals, and nonmetals have been studied systematically. It is found that doping with most of these elements can narrow down the band gap of TiO2, while in some doped systems, a recombination center induced by intermediate bands is also observed. Besides, for transition metal-doped TiO2 systems, the electron spin state analysis of dopants and the doping level investigation reveal that a relatively high spin structure tends to be formed in Cr, Mn, Fe, Zn, Mo, Tc, Ru and Cd-doped TiO2, and the doping levels of 4d-orbital transition metals are generally higher than those of 3d-orbital transition metals.
机译:由于其优异的光电子和催化性能,Titania是一种广泛使用的半导体。通过替代Ti或O替换其他阳离子或阴离子是调整原始TiO2的电子结构的常用方法。在这里,在Heyd-Scuseria-Ernzerhof(HSE06)水平,替代能量,形成能量和电子结构的ABINIO TiO2掺杂有40种元素,包括过渡金属,碱金属,碱土金属,P-Block已经系统地研究了金属和非金属。发现具有大多数这些元素的掺杂可以缩小TiO 2的带隙,而在一些掺杂的系统中,也观察到由​​中间带引起的重组中心。此外,对于过渡金属掺杂TiO2系统,掺杂剂的电子旋转状态分析和掺杂水平研究表明,相对高的旋转结构趋于在Cr,Mn,Fe,Zn,Mo,Tc,Ru和Cd-中形成掺杂的TiO 2和4D轨道过渡金属的掺杂水平通常高于3D轨道过渡金属。

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    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

    Peking Univ Sch Adv Mat Shenzhen Grad Sch Shenzhen 518055 Peoples R China;

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  • 正文语种 eng
  • 中图分类 物理学;化学;
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