Formation of N-2 bubbles along grain boundaries in (ZnO)(1-x)(GaN)(x): nanoscale STEM-EELS studies

摘要

Direct evidence of N-2 formation after annealing of (ZnO)(1-x)(GaN)(x) alloys was revealed. N-2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N-N bonding is a competitive path for nitrogen after annealing, in addition to the increasing Ga-N bonds, indicating that N in O substitution sites (N-O) is not a stable configuration.