Effects of novel transition metal oxide doped bilayer structure on hole injection and transport characteristics for organic light-emitting diodes

摘要

A contemporary hole injection bilayer structure (HIBL) based on molybdenum trioxide (MoO3)-doped N,M-Di(1-naphthyl)-N,Ar-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB) has been demonstrated and compared with several efficient transition metal oxide (TMO)-based hole injection layers (HILs). Device performances of OLEDs was significantly improved by the utilization of this HIBL. Results of electroluminescence (EL) spectra, hole-only current density-voltage test and capacitance measurement by impedance spectroscopy (IS) are indicative of enhanced hole injection and transport characteristics. Moreover, ultraviolet photoelectron spectroscopy (UPS) results authenticated a cascading highest occupied molecular orbital (HOMO) energy level contributed to both improved hole injection and transport properties, therefore leads to better carrier balance and device efficiency in OLEDs.