High responsivity and high-speed 1.55 mu m infrared photodetector from self-powered graphene/Si heterojunction

摘要

Graphene has shown great potentials for new-generation photodetectors in view of its outstanding optical and electrical properties, especially its ultra-broad range absorption. Most of graphene(Gr)/Si hybrid two-dimensional(2D)-three-dimensional(3D) photodetectors, which offer a perspective on future application in integrated optoelectronics, are still however enabled the excellent detection on visible light. Herein, we reported a self-powered Cr/Si Schottky heterojunciton with a high sensivity to communication light of 1.55 mu m wavelenght by using graphene film as active area. The resultant photodetectors showed a high-speed response speed up to 5.0 mu s, togther with a responsivity approaching 39.5 mAW(-1), which are comparable with previous graphene-based photodetectors and superior to previous Gr/Si heterojunction. The high-performance of the schottky heterojunction can be ascribed to featuring a built-in field facilitating to separate photocarriers. Combined our results with the methodology of devcie fabrication, can be utilized as pathway for large-area integration of 1.55 mu m communication light photodetectors. (C) 2019 Elsevier B.V. All rights reserved.