首页> 外国专利> RAPID PHOTODETECTOR BASED ON GRAPHENE/BLACK PHOSPHORUS/MOLYBDENUM DISULFIDE/GRAPHENE HETEROJUNCTION, AND PREPARATION METHOD THEREFOR

RAPID PHOTODETECTOR BASED ON GRAPHENE/BLACK PHOSPHORUS/MOLYBDENUM DISULFIDE/GRAPHENE HETEROJUNCTION, AND PREPARATION METHOD THEREFOR

机译:基于石墨烯/黑磷/钼二硫化物/石墨烯异质结的快速光电探测器及其制备方法

摘要

A rapid photodetector based on a graphene/black phosphorus/molybdenum disulfide/graphene heterojunction, comprising a substrate (10), a first electrode (20), a second electrode (30), a first graphene layer (40), a black phosphorus thin film layer (50), a molybdenum disulfide layer (60), and a second graphene layer (70). The first electrode (20) and the second electrode (30) are arranged at an interval on a surface on one side of the substrate (10), the first electrode (20) and the second electrode (30) forming a channel structure. The first graphene layer (40), the black phosphorus thin film layer (50), the molybdenum disulfide layer (60) and the second graphene layer (70) are sequentially stacked in the channel structure, the first electrode (20) and the second electrode (30) contacting the first graphene layer (40) and the second graphene layer (70) respectively. A graphene/black phosphorus/molybdenum disulfide/graphene heterojunction is provided in the photodetector, and thus wideband response is implemented, and the response speed of the photodetector is markedly improved. The response speed can reach the microsecond scale, which is beneficial for broad application of the photodetector.
机译:一种基于石墨烯/黑磷/钼二硫化物/石墨烯异质的快速光电探测器,包括基板(10),第一电极(20),第一石墨烯层(40),黑色磷薄薄膜层(50),二硫化钼层(60)和第二石墨烯层(70)。第一电极(20)和第二电极(30)布置在基板(10)的一侧的表面上的间隔,第一电极(20)和形成通道结构的第二电极(30)。第一石墨烯层(40),黑磷薄膜层(50),钼二硫化物层(60)和第二石墨烯层(70)依次堆叠在通道结构中,第一电极(20)和第二分别接触第一石墨烯层(40)和第二石墨烯层(70)的电极(30)。在光电探测器中提供石墨烯/黑磷/钼二硫化物/石墨烯异质结,因此实现了宽带响应,并且光电探测器的响应速度显着改善。响应速度可以达到微秒刻度,这对于光电探测器的广泛应用是有益的。

著录项

  • 公开/公告号WO2021077837A1

    专利类型

  • 公开/公告日2021-04-29

    原文格式PDF

  • 申请/专利权人 SHENZHEN UNIVERSITY;

    申请/专利号WO2020CN105550

  • 发明设计人 ZHANG HAN;GAO SHAN;WANG HUIDE;GUO ZHINAN;

    申请日2020-07-29

  • 分类号H01L31/109;H01L31/032;H01L31/18;

  • 国家 CN

  • 入库时间 2022-08-24 18:29:49

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