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1+ x Zr 2Si x P 3? x O 12 by the addition of Na 3BO 3]]>

机译:<![CDATA [NA 1+ x zr 2 x ce:inf place =“post”> 3? x o 12 通过添加na 3 BO 3 ]]>

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AbstractNa1+xZr2SixP3?xO12(NASICON)-based solid electrolytes were prepared by liquid phase sintering with a Na3BO3additive to lower the NASICON sintering temperature. NASICON was sintered at 700°C with 9.1wt% Na3BO3. The obtained NASICON ceramic exhibited high room-temperature conductivity of 1×10?4Scm?1, which were three orders of magnitude higher than that of a Na3BO3-free sample. SEM observation of this ceramic revealed that neck growth among NASICON grains proceeded reasonably and that sodium borates segregated in particulate form without full penetration to NASICON grain boundaries. This characteristic microstructure is expected to contribute to the high conductivity of the NASICON-Na3BO3ceramic.Graphical abstractRelationship between room-temperature ionic conductivities and sintering temperatures for Na1+xZr2SixP3?xO12(NASICON) ceramics. In this study, NASICON ceramic with 9.1wt% Na3BO3was prepared by liquid phase sintering at 700°C. The obtained ceramic exhibited three order of magnitude higher conductivity of 1×10?4Scm?1than that of the Na3BO3free ceramic. The Na3BO3additive can reduce the NASICON sintering temperature by 200–300°C.Display Omitted]]>
机译:<![cdata [ 抽象 na 1+ x zr 2 si x < / ce:inf> p 3? x o 12 (鼻子)的固体电解质,> 3 BO 3 < / CE:INF>添加剂降低NASICON烧结温度。 Nasicon在700℃下烧结,9.1wt%na 3 bo 3 。所获得的Nasicon陶瓷表现出高室温导电性为1×10 α4 SCM ?1 ,这是比NA BO 3 - 免费样品。这种陶瓷的SEM观察显示,Nasicon颗粒中的颈部生长合理地进行,并且硼酸钠以颗粒形式进行间隔,而不完全渗透到Nasicon晶状体边界。该特性微观结构有助于Nasicon-Na 3 BO 3 陶瓷。 图形摘要 之间的关系室温离子电导率和NA 1+ X ZR 2 si x p 3? x o 12 (nasicon)陶瓷。在这项研究中,Nasicon陶瓷用9.1wt%na 3 bo 3 由液体制备在700℃下烧结。所获得的陶瓷表现出三个数量级,较高的导电率为1×10 Δ4 scm ?1 比NA 3 BO 3 免费陶瓷。 NA 3> 3 BO 3 添加剂可以将NASICON烧结温度降低200-300°C 。 显示省略 ]]>

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