Dependence of the transmittance spectrum on temperature and thickness of superconducting defects coupled in dielectric one-dimensional photonic crystals

摘要

In this work by using the transfer matrix method we calculate the transmittance spectrum in a dielectric one-dimensional photonic crystal, composed of alternating layers of Bi4Ge3O12 and SiO2, with one and two superconducting defects of high critical temperature HgBa2Ca2Cu3 O8+delta. We found the presence of defective modes within the photonic band gap, where the position of the modes changes to shorter frequencies as the temperature and thickness of the superconducting layer increase. In addition, we found that the number of defects within the PBG depends on the thickness of the superconducting layer, and by increasing the separation of the defects the coupling decreases.