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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >A novel optical e-near-zero material realized by multi-layered Ag/SiC film structures
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A novel optical e-near-zero material realized by multi-layered Ag/SiC film structures

机译:由多层AG / SiC膜结构实现的一种新型光学电子近零材料

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摘要

The design of novel epsilon-near-zero (ENZ) medium is always the one of focus in electromagnetic field. It is an important and universal method to realize ENZ material by multi-layered isotropic film structures based on the equivalent medium theory. However, the ENZ material designed based on this theory is anisotropic and c-near-zero is only along a specific direction, which greatly limits its application scope. Therefore, the realization of truly isotropic equivalent ENZ medium is significant for the development of novel optical devices. In this paper, we modify the equivalent medium theory, derive the equivalent parameters formula of multi-layered structure of anisotropic alternating films firstly, and a novel multi-layered Ag/SiC film structures is designed to realize an isotropic equivalent optical ENZ medium based on the above theory. This work perfects the equivalent medium theory system, provides theoretical guidance to improve the design and preparation of optical ENZ material in the future, and the film structure mentioned in this work has also significance for the realization of specific optical ENZ material.
机译:新型epsilon - 邻 - 零(ENZ)培养基的设计始终是电磁场的焦点之一。基于等效介质理论,通过多层各向同性膜结构实现enz材料是一种重要的且通用的方法。然而,基于该理论设计的enz材料是各向异性的,C-ut零仅沿着特定方向,这极大地限制了其应用范围。因此,实现真正各向同性等效enz介质对于新颖的光学装置的发展是显着的。在本文中,我们修改了等效介质理论,首先推导出各向异性交替膜的多层结构的等效参数公式,并且设计了一种新的多层Ag / SiC膜结构,以实现基于的各向同性等效光学enz培养基上述理论。这项工作完善了等效的中型系统,提供了改善未来光学恩斯材料的设计和制备的理论指导,本作工作中提到的薄膜结构对特定光学烯烯材料的实现也具有重要意义。

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