Studies of Electronic and Optical Materials: A. Interactions of Oxygen with Si-GeAlloys and B. Deposition of Films for Optical Storage Applications

摘要

Experimental studies and modeling of atomic bonding have been carried out foramorphous covalent alloys and CVD diamond films. The following results have been obtained: (1) Two distinct growth regimes have been found for CVD diamond films: an initial period of rapidly increasing roughness, followed by a slower increase as the diamond film grows further. (2) The difficulty in incorporating more than 10 at 96 N in PECVD a-CxNyHz films is related to plasma etching of the films. (3) Predictions for bonding in low epsilon alloys: Si-O and Si-F bonds are preferred in a-SiO2:F while Si-O, Si-F, and O-H bonds are preferred in a-SiO2:F:H. (4) A procedure has been developed for determining the optical constants and the volume fraction of the non-diamond carbon component of CVD diamond films. (5) Entropy have been found to play a critical role in determining the atomic bonding in diamond like carbon alloys. (6) Phase separation is predicted to occur in a-SixCyGez alloys due to the preference for Si-C and Ge-Ge bonds.