New modeling method for UV sensor photoelectrical parameters extraction

摘要

In this work, we have developed a new modeling tools based on physical, mathematical and numerical models for the analysis of UV-photodetectors based on ZnO NRs/PPV-C6 hybrid heterojunctions. The photoelectrical equivalent circuit parameters are the series resistance (R-S), the shunt resistance (R-P), the reverse current density (J(0)), the ideality factor (n) and the photocurrent density (J(ph)). A combined physical-mathematical-numerical approach based on the modified Schockley model, the Lambert W function and the optimized method of the Root Mean Square error (RMSE) was applied to analyze the different devices performances.