Gaussian-like transverse-mode profile characteristics of high-power large-area red-emitting VCSELs

摘要

We demonstrate a large-area red-emitting vertical-cavity surface-emitting laser (VCSEL) structure with significant improvement in the uniformity of charge carrier distribution by adopting a Si-doped Al0.20GaInP current spreading layer and a bottom disk contact. The new structure emitting at 670 nm with a bottom disk contact diameter of 20 mu m was compared with the conventional oxide-confined top-emitting structure with a similar aperture size. The maximum output peak power increased from 8.8 mW to 22.5 mW under pulsed-mode operation at room temperature. The far field improved from a strong multiple-mode pattern to a Gaussian-like profile. The corresponding divergence angle of the far-field pattern at 2Ith injection current reduced from 16.2 degrees to 10.9 degrees. (C) 2020 Optical Society of America