Phosphorus-free 1.5 mu m InAs quantum-dot microdisk lasers on metamorphic nGaAs/SOI platform

摘要

III-V semiconductor lasers epitaxially grown on silicon, especially on a silicon-on-insulator (SOI) platform, have been considered one of the most promising approaches to realize an integrated light source for silicon photonics. Although notable achievements have been reported on InP-based 1.5 mu m III V semiconductor lasers directly grown on silicon substrates, phosphorus-free 1.5 mu m InAs quantum dot (QD) lasers on both silicon and SOI platforms are still uncharted territory. In this work, we demonstrate, to the best of our knowledge, the first phosphorus-free InAs QD microdisk laser epitaxially grown on SOI substrate emitting at the telecommunications S-band by growing metamorphic InAs/InGaAs QDs on (111)-faceted SOI hollow structures. The lasing threshold power for a seven-layer InAs QD microdisk laser with a diameter of 4 mu m is measured as 234 mu W at 200 K. For comparison, identical microdisk lasers grown on GaAs substrate are also characterized. The results obtained pave the way for an on-chip 1.5 mu m light source for long-haul telecommunications. (C) 2020 Optical Society of America