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首页> 外文期刊>Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter >Strong light illumination on gain-switched semiconductor lasers helps the eavesdropper in practical quantum key distribution systems
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Strong light illumination on gain-switched semiconductor lasers helps the eavesdropper in practical quantum key distribution systems

机译:增益开关半导体激光器上的强光照明有助于窃听器在实用的量子密钥分配系统中

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摘要

The temperature of the semiconductor diode increases under strong light illumination whether thermoelectric cooler is installed or not, which changes the output wavelength of the laser (Lee et al., 2017). However, other characteristics also vary as temperature increases. These variations may help the eavesdropper in practical quantum key distribution systems. We study the effects of temperature increase on gain-switched semiconductor lasers by simulating temperature dependent rate equations. The results show that temperature increase may cause large intensity fluctuation, decrease the output intensity and lead the signal state and decoy state distinguishable. We also propose a modified photon number splitting attack by exploiting the effects of temperature increase. Countermeasures are also proposed.
机译:无论是否安装热电冷却器,都会在强光照射下增加半导体二极管的温度,这改变了激光的输出波长(Lee等,2017)。 然而,其他特征也随温度升高而变化。 这些变型可以帮助窃听器在实际量子密钥分配系统中。 通过模拟温度相关速率方程,研究温度升高对增益开关半导体激光器的影响。 结果表明,温度升高可能导致大的强度波动,降低输出强度并引导信号状态和诱饵状态可区分。 我们还通过利用温度升高的影响提出改进的光子数分裂攻击。 还提出了对策。

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