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首页> 外文期刊>RSC Advances >Vapor-assisted room temperature nanoimprinting-induced molecular alignment in patterned poly(3-hexylthiophene) nanogratings and its stability during thermal annealing
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Vapor-assisted room temperature nanoimprinting-induced molecular alignment in patterned poly(3-hexylthiophene) nanogratings and its stability during thermal annealing

机译:蒸汽辅助室温纳米压印诱导在图案化聚(3-己基噻吩)纳米植物中的分子取向及其在热退火期间的稳定性

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摘要

Vapor-assisted imprinting technology has been well explored to have good potential for practical application to fabricate topographical nanostructures of polymer film. Herein, we demonstrated that the poly(3-hexylthiophene) (P3HT) nanograting topography can be excellently fabricated via the vapor-assisted room-temperature nanoimprinting lithography (VART-NIL) technique based on a poly(dimethylsiloxane) (PDMS) template and carbon disulfide (CS2) vapor atmosphere. Grazing incidence wide angle X-ray diffraction (GIWAXD) was employed to illustrate that the VART-NIL procedure could not only be used to fabricate the topographical pattern, but also to induce the molecular alignment transition from an edge-on to a face-on alignment, including both form II and form I crystals. Furthermore, according to GIWAXD and atomic force microscopy (AFM) investigations in situ, the stability of the nanopattern surface morphology and molecular alignment of P3HT nanograting film are dependent on the thermal annealing treatment differently. The patterned P3HT nanograting morphology largely disappears into a planar surface at elevated temperatures and the crystallographic structure of the P3HT crystal transfers from form II to form I during the elevated temperature process; however, the nanoimprint-induced face-on molecule alignment of form I conformation surprisingly remains eternal within the distorted nanograting film after the cooling step. Furthermore, the face-on molecular alignment of the form I conformation remained developed and steadily and successively enhanced during the cooling step.
机译:蒸气辅助压印技术已经得到了很好的研究具有用于实际应用的聚合物膜的编造地形纳米结构的潜力。在本文中,我们表明,nanograting地形的聚(3-己基噻吩)(P3HT)可以经由蒸气辅助室温纳米压印光刻能够良好地制造基于聚(二甲基硅氧烷)(VART-NIL)技术(PDMS)模板和碳二硫化物(CS2)蒸汽气氛。掠入射广角X射线衍射(GIWAXD)中的溶液采用以表明VART-NIL过程不仅可以被用于制造具有外部构形图案,而且还诱发从分子取向转移边缘上,以面朝上对准,包括形式II和形式I的晶体。此外,根据GIWAXD和原位原子力显微镜(AFM)调查,纳米图案表面形貌和P3HT nanograting膜的分子取向的稳定性依赖于热退火处理不同。图案化的P3HT nanograting形态很大程度上消失成在升高的温度下的平面表面和从形式II的P3HT晶体转移的结晶结构中的升高的温度下处理,以形成I;然而,纳米压印诱导的面朝上型I的构象的分子对准令人惊奇地保持在冷却步骤之后将失真nanograting膜内永恒。此外,面部上的形式I的构象的分子对准仍然开发和在冷却步骤期间稳定,连续地提高。

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  • 来源
    《RSC Advances 》 |2017年第64期| 共10页
  • 作者单位

    Huaibei Normal Univ Coll Chem &

    Mat Sci Huaibei 235000 Peoples R China;

    Xi An Jiao Tong Univ Suzhou Acad Suzhou 215123 Peoples R China;

    Huaibei Normal Univ Coll Chem &

    Mat Sci Huaibei 235000 Peoples R China;

    Huaibei Normal Univ Coll Chem &

    Mat Sci Huaibei 235000 Peoples R China;

    Huaibei Normal Univ Coll Chem &

    Mat Sci Huaibei 235000 Peoples R China;

    Huaibei Normal Univ Coll Chem &

    Mat Sci Huaibei 235000 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学 ;
  • 关键词

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