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The effect of oxidation on the electronic properties of penta-graphene: first-principles calculation

机译:氧化对Penta-Graphene电子性质的影响:第一原理计算

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摘要

Herein, using first-principles calculations, we systematically studied the effect of oxidation on the structural and electronic properties of penta-graphene. We have found that the oxygen atom prefers to adsorb at the center of the C=C bond, and the interaction between the oxygen atom and penta-graphene is a strong chemical bond. When the oxygen coverage increases, the band gap of penta-graphene gradually widens due to the rigid up-shift of the conduction band. More importantly, we found that the oxygen molecule on the penta-graphene surface could self-decompose into oxygen atoms without any metal catalyst. Our calculated results show that penta-graphene would be chemically unstable when it is exposed to air. Therefore, from the application point of view, penta-graphene-based devices must be encapsulated or functionalized before exposure to air. Oxidized penta-graphene exhibits a large band gap, which can facilitate its application as dielectric layers in electronic devices.
机译:在此,使用第一原理计算,我们系统地研究了氧化对五角形 - 石墨烯结构和电子性质的影响。 我们发现氧原子更喜欢吸附在C = C键的中心,并且氧原子与五边形 - 石墨烯之间的相互作用是强烈的化学键。 当氧覆盖率增加时,由于导通带的刚性偏移,五角形石墨烯的带隙逐渐变宽。 更重要的是,我们发现五戊基 - 石墨烯表面上的氧分子可以在没有任何金属催化剂的情况下自分解成氧原子。 我们计算的结果表明,当它暴露于空气时,Penta-Graphene将在化学上不稳定。 因此,从应用点,必须在暴露于空气之前封装或官能化基于Penta-石墨烯的装置。 氧化的五边形 - 石墨烯表现出大的带隙,其可以促进其作为电子设备中的介电层的应用。

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  • 来源
    《RSC Advances》 |2019年第15期|共9页
  • 作者单位

    Northeast Normal Univ Ctr Quantum Sci Changchun 130117 Jilin Peoples R China;

    Northeast Normal Univ Ctr Quantum Sci Changchun 130117 Jilin Peoples R China;

    Northeast Normal Univ Ctr Quantum Sci Changchun 130117 Jilin Peoples R China;

    Northeast Normal Univ Ctr Quantum Sci Changchun 130117 Jilin Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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