Influence of SiO2 or h-BN substrate on the room-temperature electronic transport in chemically derived single layer graphene

摘要

The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% ((0.5%)G) is studied. Devices composed of monolayer (0.5%)G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the (0.5%)G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.