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Facile synthesis of battery waste-derived graphene for transparent and conductive film application by an electrochemical exfoliation method

机译:通过电化学剥离法对透明和导电膜施加的电池废料衍生石墨烯的构成

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摘要

One of the emerging challenges in tackling environmental issues is to treat electronic waste, with fast-growing battery waste as a notable threat to the environment. Proper recycling processes, particularly the conversion of waste to useful & value-added materials, are of great importance but not readily available. In this work, we report a facile and fast production of graphene from graphite extracted from spent Zn-C batteries. The graphene flakes are produced by electrochemically exfoliating graphite under varying DC voltages in poly(sodium 4-styrenesulfonate) (PSS) solution of different concentrations. The exfoliation takes place via the insertion of PSS into the interlayers of graphite to form C-S bonds as confirmed by FTIR and XPS studies. Under an applied voltage of 5 V and in 0.5 M PSS, high quality graphene flakes are obtained in a good yield, giving an I-D/I-G ratio of about 0.86 in Raman spectroscopy. The transparent conductive film prepared from the dispersion of high quality graphene flakes shows great promise due to its low sheet resistance (R-s) of 1.1 k omega sq(-1) and high transmittance of 89%. This work illustrates an effective and low-cost method to realize large scale production of graphene from electronic waste.
机译:解决环境问题的新出现挑战之一是对待电子废物,以快速增长的电池浪费作为对环境的显着威胁。适当的回收过程,特别是废物转化为有用和增值材料,具有重要的重要性,但不易获得。在这项工作中,我们报告了从废旧电池中提取的石墨的石墨烯的容易和快速生产。通过在不同浓度的聚(4-苯乙烯磺酸盐)(PSS)溶液的不同DC电压下电化学剥离石墨来制备石墨烯薄片。通过将PSS插入石墨中间层以形成C-S键,如FTIR和XPS研究所证实的C-S键发生。在5V的施加电压下,在0.5米PSS中,以良好的产量获得高质量的石墨烯薄片,在拉曼光谱中赋予I-D / I-G比为约0.86。由高质量的石墨烯片的分散制备的透明导电膜由于其低薄层电阻(R-S)为1.1kΩsq(-1),高透射率为89%而产生了极大的承诺。这项工作说明了一种有效和低成本的方法,实现了从电子废物中实现了石墨烯的大规模生产。

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  • 来源
    《RSC Advances》 |2020年第17期|共7页
  • 作者单位

    Inst Teknol Bandung Fac Mech &

    Aerosp Engn Mat Sci &

    Engn Res Grp Jl Ganesha 10 Bandung 40132 Indonesia;

    Natl Univ Singapore Dept Mat Sci &

    Engn Singapore 117574 Singapore;

    Inst Teknol Bandung Fac Mech &

    Aerosp Engn Mat Sci &

    Engn Res Grp Jl Ganesha 10 Bandung 40132 Indonesia;

    Inst Teknol Bandung Fac Mech &

    Aerosp Engn Mat Sci &

    Engn Res Grp Jl Ganesha 10 Bandung 40132 Indonesia;

    Inst Teknol Bandung Fac Math &

    Nat Sci Inorgan &

    Phys Chem Res Grp Jl Ganesha 10 Bandung 40132 Indonesia;

    Inst Teknol Bandung Fac Mech &

    Aerosp Engn Mat Sci &

    Engn Res Grp Jl Ganesha 10 Bandung 40132 Indonesia;

    ASTAR Agcy Sci Technol &

    Res IMRE 2 Fusionopolis Way Innovis 08-03 Singapore 138634 Singapore;

    ASTAR Agcy Sci Technol &

    Res IMRE 2 Fusionopolis Way Innovis 08-03 Singapore 138634 Singapore;

    Inst Teknol Bandung Fac Mech &

    Aerosp Engn Mat Sci &

    Engn Res Grp Jl Ganesha 10 Bandung 40132 Indonesia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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