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Physical vapor deposited organic ferroelectric diisopropylammonium bromide film and its self-powered photodetector characteristics

机译:物理气相沉积有机铁电二异丙基溴化物膜及其自动光电探测器特性

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摘要

Organic diisopropylammonium bromide (DIPAB) is a promising material with superior ferroelectric characteristics. However, the DIPAB continuous film, which is essential to explore its application potential, is challenging because its crystallization kinetics favors island-like microcrystalline growth. In this work, the continuous and uniform deposition of organic ferroelectric DIPAB film on a single crystalline Si(100) substrate is demonstrated by a thermal evaporation process. Structural and optical studies reveal that the film isc-axis oriented with an optical bandgap of 3.52 eV. The topographic image displays well-connected grain-like surface morphology with similar to 2 nm roughness. The ferroelectric domain studies illustrate the in-plane orientation of the domains, which is in accordance withc-axis oriented film where polarization is along the in-planeb-axis. The phase and amplitude responses of the domains display hysteresis and butterfly characteristics, respectively and thereby endorse the ferroelectric nature of the film. Importantly, it is demonstrated that the DIPAB film exhibits remarkable self-powered UV-Vis photodetector characteristics with responsivity of 0.66 mA W(-1)and detectivity of 2.20 x 10(9)Jones at 11.45 mW cm(-2)light intensity. The fabricated DIPAB film reported in this work can widen its application potential in self-powered photodetector and other optoelectronic devices.
机译:有机二异丙基溴化铵(DIPAB)是具有优异铁电特性的有希望的材料。然而,探索其应用潜力至关重要的DIPAB连续薄膜是具有挑战性的,因为其结晶动力学有利于岛状的微晶生长。在这项工作中,通过热蒸发过程证明了在单晶Si(100)衬底上的有机铁电Dipab膜的连续和均匀沉积。结构和光学研究表明,薄膜ISC轴定向为3.52eV的光学带隙。地形图像显示连接良好的晶粒状表面形态,类似于2nm粗糙度。铁电域研究说明了畴的面内取向,其符合轴取向膜,其中偏振沿着平面轴。域的相位和幅度响应分别显示滞后和蝶形特性,从而认可薄膜的铁电性质。重要的是,证明DIPAB膜表现出显着的自供电UV-VIS光电探测器特性,其响应率为0.66mA W(-1)和2.20×10(9)琼松的探测率为11.45mm(-2)光强度。本工作中报告的制造的Dipab膜可以扩大其在自动光电探测器和其他光电器件中的应用势。

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  • 来源
    《RSC Advances》 |2020年第43期|共7页
  • 作者单位

    Indian Inst Technol Madras Dept Phys Chennai 600036 Tamil Nadu India;

    Indian Inst Technol Madras Dept Phys Chennai 600036 Tamil Nadu India;

    Indian Inst Technol Madras Dept Phys Chennai 600036 Tamil Nadu India;

    Indian Inst Technol Madras Dept Phys Chennai 600036 Tamil Nadu India;

    Indian Inst Technol Madras Dept Phys Chennai 600036 Tamil Nadu India;

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  • 正文语种 eng
  • 中图分类 化学;
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