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In situ preparation of Ag nanoparticles on silicon wafer as highly sensitive SERS substrate

机译:原位制备硅晶片上的Ag纳米颗粒,如高敏感的SERS衬底

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摘要

An intensive surface enhanced Raman scattering (SERS) effect is realized by ordered Ag nanoparticles (NPs) in situ grown on silicon wafer directly using (3-aminopropyl) trimethoxysilane (APS) as both the surface modifier and reducing agent. The as-prepared ordered Ag NPs based SERS substrate shows excellent performance in detecting glycerin (an important integration in liquid super lubricating system) as well as conventional Rhodamine 6G (R6G, a kind of dye organic pollutant). The enhancement factor (EF) achieves 4-fold for glycerin and 10-fold for R6G (allowing for detecting as low as 10(-11) M aqueous R6G), confirming the high sensitivity. The limited relative standard deviations (RSD) of the enhancement factors are within 15% for both glycerin and R6G, indicating the excellent uniformity. This remarkable progress is ascribed to the advantages of APS in improving adsorption and modulating distribution of Ag NPs on silicon, which results in a large local electric field to enhance the Raman signals. The SEM and UV-visible absorption spectrum characterization verified the contribution of APS in SERS improvement by investigating the influence of APS content and reduction time during the preparation process. All these advances imply that the SERS substrates prepared by Ag NPs in situ grown on silicon wafer have great potential application in real-time interface state tracing and sensitive detection.
机译:通过在硅晶片上使用(3-氨基丙基)三甲氧基硅烷(APS)作为表面改性剂和还原剂,通过在硅晶片上生长的有序Ag纳米颗粒(NPS)来实现强化表面增强的拉曼散射(SERS)效应。基于AS的基于AG NPS的SERS基质显示出优异的性能在检测甘油(液体超级润滑系统中的一个重要积分)以及常规的罗丹明6G(R6G,一种染料有机污染物)。增强因子(EF)达到甘油和10倍的R6G的4倍(允许检测低至10(-11)米的含水R6G),确认高灵敏度。增强因子的有限相对标准偏差(RSD)均为甘油和R6G的15%,表明均匀性优异。这种显着的进展归因于AP在提高硅上AG NPS的吸附和调节分布方面的优势,这导致大型局部电场以增强拉曼信号。 SEM和UV可见吸收光谱表征通过调查制备过程中的APS含量和还原时间的影响,验证了APS在SERS改善中的贡献。所有这些进步都意味着通过AG NPS原位制备的SERS基材在硅晶片上生长在实时接口状态跟踪和敏感性检测中具有很大的潜在应用。

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  • 来源
    《RSC Advances 》 |2018年第6期| 共5页
  • 作者单位

    Shanghai Jiao Tong Univ Sch Mat Sci &

    Engn 800 Dongchuan Rd Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Mat Sci &

    Engn 800 Dongchuan Rd Shanghai 200240 Peoples R China;

    Natl Engn Res Ctr Nanotechnol Shanghai 200241 Peoples R China;

    Shanghai Jiao Tong Univ Sch Mat Sci &

    Engn 800 Dongchuan Rd Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Mat Sci &

    Engn 800 Dongchuan Rd Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Mech Engn 800 Dongchuan Rd Shanghai 200240 Peoples R China;

    Shanghai Jiao Tong Univ Sch Mat Sci &

    Engn 800 Dongchuan Rd Shanghai 200240 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学 ;
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