Analysis and Modeling of Program Disturbance by Hot Carrier Injection in 3D NAND Flash Memory Using TCAD

摘要

In this paper, we analyzed and modeled the program disturbance caused by hot carrier injection(HCI) in 3D NAND flash memory. HCI in 3D NAND occurs by band-to-band tunneling(BTBT) due to large electric field near the programming cell in the inhibited string. The dependency of HCI on electric field was confirmed at various bias conditions. Also, HCI modeling was done by calculating the exact electric field considering the change of channel potential over time due to BTBT.