机译:单层MOS2光电晶体管中的电气传输和持续光电导性
Univ Salerno Dipartimento Fis ER Caianiaello Via Giovanni Paolo II I-84084 Fisciano Italy;
Univ Salerno Dipartimento Fis ER Caianiaello Via Giovanni Paolo II I-84084 Fisciano Italy;
Univ Duisburg Essen Fak Phys Lotharstr 1 D-47057 Duisburg Germany;
CNR SPIN Salerno Via Giovanni Paolo II I-84084 Fisciano Italy;
Univ Salerno Dipartimento Fis ER Caianiaello Via Giovanni Paolo II I-84084 Fisciano Italy;
INRIM Str Cacce 91 I-10135 Turin Italy;
Singapore Univ Technol &
Design Engn Product Dev 8 Somapah Rd Singapore 487372 Singapore;
Singapore Univ Technol &
Design Engn Product Dev 8 Somapah Rd Singapore 487372 Singapore;
Univ Duisburg Essen Fak Phys Lotharstr 1 D-47057 Duisburg Germany;
two-dimensional materials; molybdenum disulfide (MoS2); phototransistor; persistent photoconductivity; charge trapping; photogating; space charge limited conduction;
机译:单层MOS2光电晶体管中的电气传输和持续光电导性
机译:InAs / GaAs结构中量子点层中的电输运和持久光电导
机译:用分子单层表面改性INAS纳米线光电晶体管中的增强的负光电导性
机译:MoS2背栅场效应晶体管中的持久光电导,磁滞和场发射
机译:单层MoS2和MoS2 /量子点杂化物:新型光电材料。
机译:单层MoS2场效应晶体管中持久光电导的外在起源
机译:单层mos2场中持久光电导的外在根源 效应晶体管