机译:使用自下而上选择区外延来剪裁GaN / Ingan Core-Shell纳米线的形态和发光
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87106 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87106 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87106 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87106 USA;
Sandia Natl Labs Ctr Integrated Nanotechnol Albuquerque NM 87185 USA;
Sandia Natl Labs Ctr Integrated Nanotechnol Albuquerque NM 87185 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87106 USA;
MOCVD; GaN/InGaN; core-shell; nanowire; multi-color LED; selective-area epitaxy;
机译:使用自下而上选择区外延来剪裁GaN / Ingan Core-Shell纳米线的形态和发光
机译:富含铟indan / GaN轴向纳米线异质结构的形态剪裁和生长机理通过等离子体辅助分子束外延
机译:核壳GaN纳米线中InGaN / GaN量子阱的阴极发光和扫描透射电子显微镜研究
机译:InGaN / GaN核壳纳米线LED的发光和效率数值模拟优化
机译:通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光(MU-PL)研究
机译:硬X射线同步加速器纳米探针对GaN / InGaN核壳单纳米线的元素分布和结构表征
机译:在蚀刻的GaN纳米棒阵列上通过金属有机气相外延生长的GaN / InGaN / GaN核-壳结构的刻面恢复和发光