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机译:反应溅射生长铁电HF0.5ZR0.5O2薄膜的制备与表征
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 151744 South Korea;
hafnium zirconium oxide; ferroelectric thin film; reactive sputtering; oxygen partial pressure; surface energy effect;
机译:反应溅射生长铁电HF0.5ZR0.5O2薄膜的制备与表征
机译:射频磁控溅射在Si(100)衬底上生长的高c轴织构MgO缓冲层的制备和表征,用作铁电薄膜的生长模板
机译:射频磁控溅射在Si(100)衬底上生长的高c轴织构MgO缓冲层的制备和表征,用作铁电薄膜的生长模板
机译:硫化反应溅射前驱体制备Cu
机译:固态锂离子电池RF溅射生长的硫代锗酸锂薄膜电解质的制备与表征。
机译:四(乙基甲基氨基)和四(二甲基氨基)前体在原子层沉积Hf0.5Zr0.5O2薄膜中铁电性能的比较研究
机译:通过反应溅射在Si(110)衬底上生长的Inn薄膜的特征