Raman spectra; X-ray diffraction; copper compounds; germanium compounds; grain size; high-temperature effects; semiconductor growth; semiconductor thin films; sputter deposition; voids (solid); zinc compounds; Cusub2/subZnGeSsub4/sub; Ge sulfide sublimation; MoSsub2/sub layer thickness; Raman spectra; X-ray diffraction; XRD; ZnS secondary phase; grain size; manufacturing condition; pinhole formation; precursor deposition; reactive magnetron cosputtering technique; sputtering pressure; sulfurization temperature; sulfurizing reactively sputtered precursor; tetragonal stannite CZGS materials; thin film preparation; void formation; Chemicals; Educational institutions; Films; Grain size; Photovoltaic cells; Sputtering; X-ray scattering; Cuinf2/infZnGeSinf4/inf; reactive sputtering; sputtering pressure; sulfurization temperature;
机译:<![CDATA [CDATA [CDATA [CDATA:INF LOC =“POST”> 2 CE:INF> O,带
机译:<![cdta [with
机译:“> SE
机译:Cu
机译:INF56的特征,INF56是在豆类锈菌乌头霉菌感染结构发育过程中表达的基因。
机译:趋磁细菌中磁铁矿(Fe(inf3)O(inf4))和钙铁矿(Fe(inf3)S(inf4))的受控生物矿化
机译:O