机译:SemipoLar的光谱分辨内部量子效率和载波动力学(10(1)覆盖1)芯壳三角形纳米杆GAN / Ingan LED
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87131 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87131 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87131 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87131 USA;
Sandia Natl Labs Ctr Integrated Nanotechnol POB 5800 Albuquerque NM 87185 USA;
Sandia Natl Labs Ctr Integrated Nanotechnol POB 5800 Albuquerque NM 87185 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87131 USA;
Univ New Mexico Ctr High Technol Mat Albuquerque NM 87131 USA;
selective area growth; MOCVD; nanostructures; TRPL; light emitting diodes;
机译:SemipoLar的光谱分辨内部量子效率和载波动力学(10(1)覆盖1)芯壳三角形纳米杆GAN / Ingan LED
机译:c平面,{10(1)over-bar1}和{11(2)over-bar2} InGaN / GaN基发光二极管的内部量子效率和载流子注入效率
机译:在Ingan / GaN量子阱上的各种电荷载体分布的LED结构内部量子效率
机译:核-壳型InGaN / GaN多量子阱纳米线LED效率的三维数值研究
机译:在低载流子密度状态下,半导体自组装量子点中的超快载流子动力学。
机译:InGaN / GaN多量子阱LED纳米线中的载流子局部化效应:发光量子效率的提高和负热活化能
机译:半极性低效率下垂的解释$(20 \ bar 2 \ bar 1)$ 通过评估载流子复合系数,InGaN / GaN LED