Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

摘要

Semiconductor microcavities can greatly enhance the light-emission of embedded quantum dots (QDs). Here, a new route toward the microcavity-QD system by fabricating microcavities followed by growing ordered QDs on a patterned microresonator is proposed, which keeps QDs from being etched. Self-assembled Ge QDs prefer to form at the rims of Si microrings or microdisks. The Ge QDs on the pit- or groove-patterned microring resonator (MRR) show better size uniformity and position accuracy. These features are explained by the evolutions of surface morphology and surface chemical potential distribution. Sharp photoluminescence peaks in the telecommunication band with the quality factors in the range of 450-850 from groove-patterned MRR are observed at 295 K due to efficient overlap between Ge QDs and resonant modes. Our schemes shed light on the exactly site-controlled growth of QDs on micro- and nano-structures, which further facilitates the investigation of light-matter interactions.