Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application

摘要

Resistive switching devices have tremendous potential for memory, logic, and neuromorphic computing applications. Cation-based resistive switching devices intrinsically show nonvolatile memory characteristics under high compliance current (I-CC), while show volatile threshold switching (TS) selector characteristics under low I-CC. However, separate researches about cation-based memory or selector are hard to evade the typical current-retention dilemma, which results in the hardship to obtain low-current memory and high-current selector. Here, we propose a novel strategy to realize nonvolatile storage characteristics in a volatile TS device by modulating the rupture degree of conductive filament (CF). Enlarging the rupture degree of the CF with a certain RESET process, as confirmed by transmission electron microscope and energy dispersive spectrometry results, the threshold voltage of the Ag/HfO2/Pt TS devices can be enlarged from 0.9 to 2.8 V. Generation of the voltage difference enables the volatile TS devices the ability of self-selective nonvolatile storage. Increasing the RESET magnitude and shrinking the device size have been proved effective ways to increase the read window of the TS memory (TSM) devices. Evading the limit of the current-retention dilemma, ultra-low energy dissipation can be obtained by decreasing I-CC to nA level. With self-selective, low-energy, and potential high-density integration characteristics, the proposed TSM device can act as a potential supplement of novel storage class memories.