Tunable dual emission in Mn2+-doped CsPbX3 (X = Cl, Br) quantum dots for high efficiency white light-emitting diodes

摘要

Doping of Mn2+ into semiconductor nanocrystals has been demonstrated to endow them with novel electronic, optical and magnetic functionalities. In this paper, Mn-doped CsPbX3 (X = Br, Cl) quantum dots (QDs) were synthesized at room temperature via a facile strategy by introducing dimethyl sulfoxide (DMSO)-MnBr2/PbX2 composite as a precursor. The excitonic emission spectra of the as-obtained Mn-doped CsPbX3 QDs can be tuned from 517 nm to 418 nm by adjusting the ratio of PbBr2/PbCl2 precisely, and the luminescence mechanism of the doped QDs is discussed in detail. Moreover, the highest photoluminescence quantum yield of the Mn2+ emission achieves 36.7%, which is comparable with QDs prepared by the conventional hot-injection method. Depending on the ratios of PbPb2/PbCl2, the energy transfer rate from the band-edge to Mn2+ excited state is in the range of 0.006-20.42 x 10(7) s(-1). Furthermore, white light-emitting diodes (LEDs) were successfully fabricated by combining the as-prepared Mn-doped CsPbX3 QDs with commercial UV GaN chips, and the high luminous efficiency of the as-prepared white LEDs was developed to 55.9 lm W-1. This work strongly supports the fact that Mn-doped CsPbX3 QDs are promising materials for application in lighting and displaying fields.