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机译:通过化学气相沉积从其薄片中衍生MOS2纳米杆
Zhejiang Univ Technol Coll Chem Engn Hangzhou 310014 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310024 Zhejiang Peoples R China;
Peking Univ Key Lab Phys &
Chem Nanodevices Beijing 100871 Peoples R China;
Zhejiang Univ Technol Coll Chem Engn Hangzhou 310014 Zhejiang Peoples R China;
Zhejiang Univ Sch Mat Sci &
Engn State Key Lab Silicon Mat Hangzhou 310024 Zhejiang Peoples R China;
MoS2; nanoribbon; transition metal dichalcogenides; chemical vapor deposition; growth mechanism;
机译:通过化学气相沉积从其薄片中衍生MOS2纳米杆
机译:通过化学气相沉积在高κB衬底上的原子上薄MOS2薄片的生长
机译:化学气相沉积生长的低接触电阻高迁移率多层MoS2薄片
机译:化学气相沉积法合成大面积MoS2剑样片
机译:石墨烯薄膜和石墨烯纳米的晶体生长通过化学气相沉积
机译:化学气相沉积法制备单壁MoS2单层薄片的研究
机译:石墨烯纳米带晶体管在输运中的输运性质 石墨烯纳米带晶体管在化学气相沉积中的性质 生长的晶圆级石墨烯